View FDD6644S_5967742.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

october 2002 ? 2002 fairchild semiconductor corporation FDD6644S rev b (w) FDD6644S 30v n-channel powertrench ? ? ? ? mosfet general description the FDD6644S is designed to replace a dpak mosfet and schottky diode in synchronous dc:dc power supplies. this 30v mosfet is designed to maximize power conversion efficiency, providing a low r ds(on) and low gate charge. the FDD6644S includes an integrated schottky diode using fairchild?s monolithic syncfet technology. applications ? dc/dc converter features ? 66 a, 30 v r ds(on) = 8.5 m ? @ v gs = 10 v r ds(on) = 10.0 m ? @ v gs = 4.5 v ? low gate charge ? fast switching ? high performance trench technology for extremely low r ds(on) g s d to-252 d-pak (to-252) absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 16 v i d drain current ? continuous (note 3) 66 a ? pulsed (note 1a) 100 power dissipation for single operation (note 1) 57 (note 1a) 3.1 p d (note 1b) 1.3 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r jc thermal resistance, junction-to-case (note 1) 2.2 c/w r ja thermal resistance, junction-to-ambient (note 1a) 40 c/w r ja thermal resistance, junction-to-ambient (note 1b) 96 c/w package marking and ordering information device marking device reel size tape width quantity FDD6644S FDD6644S 13?? 12mm 2500 units FDD6644S s g d
FDD6644S rev b (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss drain-source avalanche energy single pulse, v dd = 15 v, i d = 16a 237 mj i ar drain-source avalanche current 16 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 1 ma 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 24 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gss gate?body leakage v gs = 16 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1 1.3 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c ?1.6 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 16 a v gs = 4.5 v, i d = 15 a v gs = 10 v, i d = 16 a,t j =125 c 6.5 7.5 10 8.5 10 12.5 m ? g fs forward transconductance v ds = 5 v, i d = 16 a 66 s i d(on) on-state drain current v gs = 10 v, v ds = 5 v 60 a dynamic characteristics c iss input capacitance 2790 pf c oss output capacitance 515 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 175 pf r g gate resistance v gs = 0 v, f = 1.0 mhz 1.6 ? switching characteristics (note 2) t d(on) turn?on delay time 11 20 ns t r turn?on rise time 12 22 ns t d(off) turn?off delay time 51 81 ns t f turn?off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 17 30 ns q g total gate charge 25 35 nc q gs gate?source charge 5.6 nc q gd gate?drain charge v ds = 15v, i d = 16 a, v gs = 5 v 6.4 nc FDD6644S
FDD6644S rev b (w) d r p ds(on) electrical characteristics (continued) t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 4.4 a v sd drain?source diode forward voltage v gs = 0 v, i s = 4.4 a (note 2) 490 700 mv t rr diode reverse recovery time 21 ns i rm maximum recovery current 1.6 a q rr diode reverse recovery charge di f /dt = 300a/us, i f = 16a 17 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja = 40c/w when mounted on a 1in 2 pad of 2 oz copper b) r ja = 96c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. maximum current is calculated as: where p d is maximum power dissipation at t c = 25c and r ds(on) is at t j(max) and v gs = 10v. package current limitation is 21a FDD6644S
FDD6644S rev b (w) typical characteristics 0 20 40 60 80 100 00.511.522.53 v ds , drain-source voltage (v) i d , drain current (a) 2.5v 4.5v v gs = 10v 2.0v 3.5v 3.0v 0.8 1.3 1.8 2.3 0 20406080100 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.5v 6.0v 3.0v 3.5v 10v 4.5v figure 1. on-region characteristics figure 2. on-resistance variation with drain current and gate voltage 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 78a v gs =10v 0.004 0.008 0.012 0.016 0.02 0.024 0.028 0246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 8.0a t a = 125 o c t a =25 o c figure 3. on-resistance variation with temperature figure 4. on-resistance variation with gate-to-source voltage 0 15 30 45 60 75 90 11.522.533.5 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.01 0.1 1 10 0 0.2 0.4 0.6 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics figure 6. body diode forward voltage variation with source current and temperature FDD6644S
FDD6644S rev b (w) typical characteristics 0 2 4 6 8 10 0 1020304050 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 78a v ds = 10v 20v 15v 0 1000 2000 3000 4000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss f = 1mhz v gs = 0 v c rss c oss figure 7. gate charge characteristics figure 8. capacitance characteristics 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 1s 100ms r ds(on) limit v gs = 10v single pulse r ja = 125 o c/w t a = 25 o c 10ms 10s 100us 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating area figure 10. single pulse maximum power dissipation 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transien t thermal resistance r ja (t) = r(t) * r ja r ja = 125 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDD6644S
FDD6644S rev b (w) typical characteristics (continued) syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 12 shows the reverse recovery characteristic of the FDD6644S. figure 12. FDD6644S syncfet body diode reverse recovery characteristic. for comparison purposes, figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet (fdd6644). figure 13. non-syncfet (fdd6644) body diode reverse recovery characteristic. schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. this will increase the power in the device. 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 v ds , reverse voltage (v) i dss , reverse le akage current (a ) t a = 125 o c t a = 25 o c t a = 100 o c figure 14. syncfet body diode reverse leakage versus drain-source voltage and temperature FDD6644S 0.08a/div 12.5 ns/div 0.08a/div 5.0 ns/div

!"#$%"&'(%& %)'"%&'!%*$%('((!'&$$% "'+'%,'*- %& ''.$'-'( $$%+!% !"'*%("&%%$%%(
/ 0 ! 11 2 2 345

1

23 45 11
3 45 1
1 1 2

1

3

21

6 2 7 1

21

11 2 1

21 11 23 2

$
2 (

( %

1
1 1
1
2

2

1
23
11
2 1

2

1

1

2

1

1

1

2
1

2
"
$
$
(
$

!"# ! $ % &
'( )
* + ,-./ ,
0 " " "!

"# ! 1+#
!% ! 0 #23 #24 #25 (
(+
# 6% 6 7
! 0!$8!#! 0!,8 0!,!
0 +$!
'!

▲Up To Search▲

Price & Availability of FDD6644S

	To Download FDD6644S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .